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Power Transistors
2SC5034
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.60.2
s Features
q q q
3.20.1
9.90.3
2.90.2
4.10.2 8.00.2 Solder Dip
High collector to emitter VCEO High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25C)
Ratings 500 500 400 7 15 7 3 35 2.0 150 -55 to +150 Unit V V V V A A A W C C
15.00.3
3.00.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
13.7-0.2
s Absolute Maximum Ratings
+0.5
1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123
2.60.1 0.70.1
7
1:Base 2:Collector 3:Emitter TO-220E Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = -1.2A, VCC = 150V 10 1.0 2.0 0.3 400 10 8 1.0 1.5 V V MHz s s s min typ max 100 100 Unit A A V
1
Power Transistors
PC -- Ta
80 5 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2.0W) TC=25C IB=300mA 250mA 200mA 3 150mA 100mA 2 80mA 60mA 40mA 1 10 0 0 20 40 60 80 100 120 140 160 (2) (3) 0 0 2 4 6 8 10 20mA
2SC5034
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100C -25C
VCE(sat) -- IC
Collector power dissipation PC (W)
70 60 50 40 30 20 (1)
Collector current IC (A)
4
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100 1000 IC/IB=5 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C
hFE -- IC
1000 VCE=5V 300 100 30 10 3 1 0.3 0.1 0.01 0.03
fT -- IC
VCE=10V f=1MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
100 TC=100C 30 10 3 1 0.3 0.1 0.01 0.03 -25C
25C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency fT (MHz)
300
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
10000 100 IE=0 f=1MHz TC=25C 30
ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=150V TC=25C
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C ICP IC t=0.5ms 3 1 0.3 0.1 0.03 0.01 10ms 1ms
Collector output capacitance Cob (pF)
3000 1000 300 100 30 10 3 1 0.1
Switching time ton,tstg,tf (s)
Collector current IC (A)
10 3 tstg 1 0.3 0.1 0.03 0.01 tf ton
10
DC
0.3
1
3
10
30
100
0
1
2
3
4
5
6
7
8
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Area of safe operation, reverse bias ASO
16 14 Lcoil=200H IC/IB=5 (IB1=-IB2) TC=25C
2SC5034
Reverse bias ASO measuring circuit
L coil IB1 Vin T.U.T IC
Collector current IC (A)
12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 800
-IB2
VCC
IC
tW
Vclamp
Collector to emitter voltage VCE (V)
Rth(t) -- t
102 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1)
Thermal resistance Rth(t) (C/W)
10
(2)
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3

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